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Excelics Semiconductor

EIC7179-8 Datasheet Preview

EIC7179-8 Datasheet

Internally Matched Power FET

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EIC7179-8
7.10-7.90 GHz 8-Watt Internally-Matched Power FET
Issued Date: 06-22-04
FEATURES
7.10 – 7.90 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
9 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC7179-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 7.10-7.90GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 7.10-7.90GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 7.10-7.90GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 7.10-7.90GHz
Id1dB
Drain Current at 1dB Compression f = 7.10-7.90GHz
Output 3rd Order Intermodulation Distortion
IM3 f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 7.90 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
7.5
-43
TYP
39.5
8.5
30
2400
-46
4000
-2.5
3.5
MAX
UNITS
dBm
dB
±0.6 dB
2800
%
mA
dBc
4500
-4.0
4.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2004




Excelics Semiconductor

EIC7179-8 Datasheet Preview

EIC7179-8 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
EIC7179-8
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
32 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 2200mA
S11 and S22
Swp Max
8.5GHz
20
S21 and S12
SE-[I31C.0,711] 7*9-8
-5-.40.S0 [2,2] *
EIC7179-8
-10.0
3.0
4.0
5.0
10.0
10
0
-10
DB(|S[2,1]|) *
EIC7179-8
DB(|S[1,2]|) *
EIC7179-8
-0.2
-0.4
0.2
0.4
Swp Min
6.5GHz
-20
-30
6.5
7 7.5 8
Frequency (GHz)
8.5
FREQ
(GHz)
6.25
6.50
6.75
7.00
7.25
7.50
7.75
8.00
8.25
8.50
8.75
--- S11 ---
MAG
ANG
0.880
-49.670
0.803
-70.860
0.693
-96.200
0.517 -126.330
0.330 -162.030
0.165
137.750
0.160
26.960
0.285
-38.600
0.398
-86.640
0.492 -128.940
0.570 -165.600
--- S21 ---
MAG
ANG
2.147
58.460
2.561
25.780
2.913
-8.850
3.150
-44.530
3.324
-79.880
3.420 -117.150
3.298 -154.880
3.055
167.050
2.676
129.920
2.241
93.730
1.765
59.440
--- S12 ---
MAG
ANG
0.045
1.160
0.061
-30.980
0.078
-66.370
0.096 -100.870
0.112 -136.570
0.122 -173.260
0.129
150.260
0.126
113.450
0.115
77.180
0.099
43.170
0.081
10.010
--- S22 ---
MAG
ANG
0.220 -119.050
0.255
155.400
0.409
103.720
0.533
66.370
0.576
32.440
0.545
-2.360
0.470
-43.000
0.399
-92.540
0.413 -144.320
0.505
173.770
0.606
143.580
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2004


Part Number EIC7179-8
Description Internally Matched Power FET
Maker Excelics Semiconductor
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EIC7179-8 Datasheet PDF





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