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EIC7179-8 - Internally Matched Power FET

Description

The EIC7179-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Features

  • 7.10.
  • 7.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC7179-8
Manufacturer Excelics Semiconductor
File Size 203.73 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC7179-8 Datasheet
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www.DataSheet4U.com EIC7179-8 7.10-7.90 GHz 8-Watt Internally-Matched Power FET Issued Date: 06-22-04 FEATURES • • • • • • • • 7.10 – 7.90 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 9 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC7179-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.10-7.
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