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Excelics Semiconductor

EIC7678-25 Datasheet Preview

EIC7678-25 Datasheet

Internally Matched Power FET

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UPDATED 07/23/2008
EIC7678-25
7.60-7.80 GHz 25-Watt Internally Matched Power FET
FEATURES
7.60– 7.80GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+44.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC7678-25
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1)
MIN
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 7.60-7.80GHz
VDS = 10 V, IDSQ 6500mA
Gain at 1dB Compression
f = 7.60-7.80GHz
VDS = 10 V, IDSQ 6500mA
Gain Flatness
f = 7.60-7.80GHz
VDS = 10 V, IDSQ 6500mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 6500mA
f = 7.60-7.80GHz
43.5
7.5
Id1dB
Drain Current at 1dB Compression
f = 7.60-7.80GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2)
VDS = 3 V, IDS = 130 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) Overall Rth depends on case mounting.
TYP
44.5
8.5
30
6800
11
-2.5
1.3
MAX
±0.6
7700
13
-4.0
1.6
UNITS
dBm
dB
dB
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
38.5 dBm
175 oC
-65 to +175 oC
93W
CONTINUOUS2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
93W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2008




Excelics Semiconductor

EIC7678-25 Datasheet Preview

EIC7678-25 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 07/23/2008
EIC7678-25
7.60-7.80 GHz 25-Watt Internally Matched Power FET
S-PARAMETERS
Measured at Vds=10V, IDSQ=6500mA
P1dB vs Frequency
47
46
45
44
43
42
41
7.55 7.6 7.65 7.7 7.75 7.8 7.85
Freq/GHz
G1dB vs Frequency
12
10
8
6
4
2
0
7.55 7.6 7.65 7.7 7.75 7.8 7.85
Freq/GHz
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised July 2008


Part Number EIC7678-25
Description Internally Matched Power FET
Maker Excelics Semiconductor
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EIC7678-25 Datasheet PDF






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