EIC7678-25 - Internally Matched Power FET

Features

7.60.
7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC7678-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168.

Excelics Semiconductor

Datasheet Details

Part number	EIC7678-25
Manufacturer	Excelics Semiconductor
File Size	233.12 KB
Description	Internally Matched Power FET
Datasheet	EIC7678-25 Datasheet
Additional preview pages of the EIC7678-25 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com EIC7678-25 UPDATED 07/23/2008 7.60-7.80 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • 7.60– 7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC7678-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1) Output Power at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Gain at 1dB Compression f = 7.60-7.

Published: Aug 4, 2009 |