EIC7678-25 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - 7.60- 7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 d Bm Output Power at 1d B pression 8.5 d B Power Gain at 1d B pression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1) Output Power at 1d B pression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500m A Gain at 1d B pression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500m A Gain Flatness f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 6500m A f = 7.60-7.80GHz Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2) 43.5 7.5 44.5 8.5 UNITS d Bm d B ±0.6 30 6800 11 -2.5 1.3 7700 13 -4.0 1.6 o d B % m A A V C/W f = 7.60-7.80GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 m A 2) Overall Rth depends on case mounting. Note: 1) Tested with 50 Ohm gate resistor. MAXIMUM RATING AT 25°C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38.5 d Bm 175 o C -65 to +175 o C 93W CONTINUOUS2 10V -4V @ 3d B pression 175 o C -65 to +175 o C 93W Vds Vgs Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 2 Revised July 2008 .. UPDATED 07/23/2008 7.60-7.80 GHz 25-Watt Internally Matched Power FET S-PARAMETERS Measured at Vds=10V, IDSQ=6500m A P1d B vs Frequency 47 46 45 12 10 8 G1d B vs...