EIC7785-10 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - - 7.70- 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 d Bm Output Power at 1d B pression 8.5 d B Power Gain at 1d B pression 28% Power Added Efficiency -46 d Bc IM3 at PO = 29.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200m A Gain at 1d B pression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200m A Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200m A Power Added Efficiency at 1d B pression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 3200m A Drain Current at 1d B pression f = 7.70-8.50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.50GHz Saturated Drain Current Pinch-off...