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EIC7785-10 Datasheet

Internally Matched Power FET

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UPDATED 04/12/2006
EIC7785-10
7.70-8.50 GHz 10-Watt Internally Matched Power FET
FEATURES
7.70– 8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
28% Power Added Efficiency
-46 dBc IM3 at PO = 29.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC7785-10
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 7.70-8.50GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 8.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 57 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
39.5
7.5
TYP
40.5
8.5
28
3300
MAX
±0.6
3700
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
5700
7100
mA
-2.5 -4.0
V
2.5 3.0 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
15
-5
104.4mA
-17.4mA
39.5dBm
175 oC
-65 to +175 oC
50W
10V
-4V
34.8mA
-5.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised April 2006


Part Number EIC7785-10
Description Internally Matched Power FET
Maker Excelics Semiconductor
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