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EID0910A1-12 - 9.50-10.50 GHz 12-Watt Internally Matched Power FET

Features

  • 9.50.
  • 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

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Datasheet Details

Part number EID0910A1-12
Manufacturer Excelics Semiconductor
File Size 108.52 KB
Description 9.50-10.50 GHz 12-Watt Internally Matched Power FET
Datasheet download datasheet EID0910A1-12 Datasheet

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www.DataSheet4U.com EID0910A1-12 UPDATED 07/12/2007 9.50-10.50 GHz 12-Watt Internally Matched Power FET Excelics EID0910A1-12 .827±.010 .669 .120 MIN FEATURES • • • • • • • 9.50– 10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 9.