EID1314A1-12
FEATURES
- 13.75-14.50 GHz Bandwidth
- Input/Output Impedance Matched to 50 Ohms
- +41.0 d Bm Output Power at 1d B pression
- 6.0 d B Power Gain at 1d B pression
- 23% Power Added Efficiency
- Hermetic Metal Flange Package
- 100% Tested for DC, RF, and RTH
.024 .421
YYWW
.120 MIN
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
Caution! ESD sensitive device.
MIN 40.0 5.0 TYP 41.0 6.0 ±0.6 23 3960 5900 -1.2 2.5 5100 8200 -2.5 3.5 o
P1d B G1d B ∆G PAE Id1d B IDSS VP RTH
PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200m A Gain at 1d B pression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200m A Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 3200m A Power Added Efficiency at 1d B pression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 3200m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 14.40-15.35GHz
UNITS d Bm d B d B...
