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EID1314A1-12 Datasheet Preview

EID1314A1-12 Datasheet

13.75-14.50 GHz 12-Watt Internally Matched Power FET

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UPDATED: 07/12/2007
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EID1314A1-12
13.75–14.50 GHz 12-Watt Internally Matched Power FET
FEATURES
13.75-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
23% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EID1314A1-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 14.40-15.35GHz
Drain Current at 1dB Compression f = 14.40-15.35GHz
Caution! ESD sensitive device.
MIN TYP MAX UNITS
40.0 41.0
dBm
5.0 6.0
dB
±0.6 dB
23 %
3960 5100
mA
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
5900 8200
mA
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 64 mA
-1.2 -2.5
V
2.5 3.5 oC/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
220 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
35 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007




Excelics Semiconductor

EID1314A1-12 Datasheet Preview

EID1314A1-12 Datasheet

13.75-14.50 GHz 12-Watt Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED: 07/12/2007
EID1314A1-12
13.75–14.50 GHz 12-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS
SEMICONDUCTOR, INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised July 2007


Part Number EID1314A1-12
Description 13.75-14.50 GHz 12-Watt Internally Matched Power FET
Maker Excelics Semiconductor
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