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Excelics Semiconductor

EID1414A1-8 Datasheet Preview

EID1414A1-8 Datasheet

14.00-14.50 GHz 8-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
EID1414A1-8
14.00-14.50 GHz 8-Watt Internally-Matched Power FET
FEATURES
14.00-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
27% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1414A1-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.00-14.50GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 14.00-14.50GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 14.00-14.50GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 14.00-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 14.00-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 40 mA
MIN
38.5
5.5
TYP
39.5
6.5
27
2800
4200
-1.2
3.5
MAX
UNITS
dBm
dB
±0.6 dB
%
3600 mA
5760 mA
-2.5 V
4.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID1414A1-8 Datasheet Preview

EID1414A1-8 Datasheet

14.00-14.50 GHz 8-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
EID1414A1-8
UPDATED 07/12/2007
14.00-14.50 GHz 8-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
35 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 2200mA
S11 and S22
Swp Max
15GHz
20
S21 and S12
-3.0
-4.0
-5.0
-10.0
3.0
4.0
5.0
10.0
10
0
-10
FREQ
(GHz)
13.60
13.70
13.80
13.90
14.00
14.10
14.20
14.30
14.40
14.50
14.60
14.70
14.80
14.90
-0.2
-0.4
S[1,1] *
EID1414-8
S[2,2] *
EID1414-8
--- S11 ---
MAG
ANG
0.4077
-145.55
0.3666
-155.39
0.3254
-166.06
0.2798
-178.28
0.2373
168.69
0.1971
152.39
0.1656
132.83
0.1424
109.53
0.1325
86.10
0.1346
61.35
0.1456
41.09
0.1612
23.89
0.1724
9.26
0.1832
-3.80
0.2 -20
0.4
Swp Min
13.5GHz
-30
13.5
--- S21 ---
MAG
ANG
2.5516
132.84
2.6444
123.30
2.6910
114.68
2.7499
104.97
2.7742
95.48
2.7890
86.00
2.7922
76.30
2.7801
66.44
2.7470
57.12
2.7206
47.94
2.6903
38.72
2.6450
29.91
2.5955
20.97
2.5416
12.02
DB(|S[2,1]|) *
EID1414-8
DB(|S[1,2]|) *
EID1414-8
14 14.5
Frequency (GHz)
--- S12 ---
MAG
ANG
0.0504
118.29
0.0528
105.14
0.0542
97.21
0.0560
87.14
0.0561
76.29
0.0580
65.56
0.0610
55.52
0.0601
46.74
0.0615
37.32
0.0610
27.10
0.0610
15.70
0.0606
5.80
0.0602
-2.53
0.0587
-14.26
15
--- S22 ---
MAG
ANG
0.4354
159.24
0.3997
149.67
0.3624
138.73
0.3259
126.21
0.2990
111.82
0.2760
96.10
0.2647
80.39
0.2660
63.22
0.2747
48.13
0.2865
35.06
0.3018
23.52
0.3201
13.11
0.3389
4.09
0.3527
-4.26
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007


Part Number EID1414A1-8
Description 14.00-14.50 GHz 8-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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EID1414A1-8 Datasheet PDF





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