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Excelics Semiconductor

EIM4953-4 Datasheet Preview

EIM4953-4 Datasheet

4.9-5.3 GHz Multi-Stage Power Amplifier

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ISSUED 02/12/2008
EIM4953-4
4.9-5.3 GHz Multi-Stage Power Amplifier
FEATURES
4.9-5.3GHz Operating Frequency Range
35.5dBm Output Power at 1dB Compression
30.0 dB Typical Power Gain @1dB gain compression
-45.0Bc Typical OIM3@ each tone Pout 23.5dBm
Non-Hermetic Metal Flange Package
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
EXCELICS
VD1
EIM4953-4
RF IN
-5V
GND
VD2
RF OUT
N/C
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, VD1=7V, VD2=10V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F Operating Frequency Range
4.9 5.3 GHz
P1dB
Output Power at 1dB Gain Compression
34.5
35.5
dBm
G1dB
OIMD3
Input RL
Gain @1dB gain compression
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 23.5dBm
Input Return Loss
27 30
dB
-45 dBc
-12 -10 dB
Output RL Output Return Loss
-15 -10 dB
VD1 Drain Supply Voltage 1
7 9V
VD2 Drain Supply Voltage 2
10 V
IDQ1 Quiescent Drain Current 1
IDQ2 Quiescent Drain Current 2
Vgg Gate Supply Voltage
Rth Thermal Resistance
800
1100
-5
4.2
mA
mA
V
oC/W
Tch
Channel Temperature Rise
Note: Turn on/off sequence is required: ---to turn on: apply -5V on both Vgg first, then +7V and +10V.
---to turn off: turn +7V and +10V off first, then turn -5V off
80 ºC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised February 2008




Excelics Semiconductor

EIM4953-4 Datasheet Preview

EIM4953-4 Datasheet

4.9-5.3 GHz Multi-Stage Power Amplifier

No Preview Available !

www.DataSheet4U.com
ISSUED 02/12/2008
EIM4953-4
4.9-5.3 GHz Multi-Stage Power Amplifier
MAXIMUM RATINGS @25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS 1,2
VD1 Drain Supply Voltage 1
14V
9V
VD2 Drain Supply Voltage 2
14V
10V
Vgg Gate Supply Voltage
-10V
-6 V
Igg Gate Current
150mA
50 mA
PIN Input Power
20dBm
@ 3dB compression
TCH Channel Temperature
175°C
165°C
TSTG
Storage Temperature
-65/175°C
-65/175°C
PT Total Power Dissipation
29.8W
Notes: 1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH
25W
Package Dimension and Pin Assignment
.120 MIN
.920
.412
.206
R0.063
(4 PLCS)
0.060X0.060
VD1
.827 .669 RF IN
-5V
EXCELICS
EIM4953-4
.004
GND
.412
.920
VD2
RF OUT .100
N/C
.020
.105
Dimensions are in inches
* NC: No connection inside the package
.063
.157
.177
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised February 2008


Part Number EIM4953-4
Description 4.9-5.3 GHz Multi-Stage Power Amplifier
Maker Excelics Semiconductor
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