datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Excelitas
Excelitas

C30662-1 Datasheet Preview

C30662-1 Datasheet

Large Area InGaAs Avalanche Photodiodes

No Preview Available !

C30662-1 pdf
DATASHEET
Photon Detection
C30645 and C30662 Series
Large Area InGaAs Avalanche Photodiodes
Key Features
Spectral response 1100 - 1700 nm
High responsivity
Low dark current and noise
Large area
RoHS-compliant
Available with lead-solder
Applications
Eye-safe Laser Range Finding
Optical time-domain reflectometer
(OTDR)
Optical communication systems
The C30645 and C30662 Series Avalanche Photodiodes are high
speed, large area lnGaAs/lnP APDs that provide large QE, high
responsivity, and low noise.
Excelitas Technologies’ C30645 and C30662 Series APDs are high
speed, large area lnGaAs/lnP avalanche photodiodes. These devices
provide large quantum efficiency, (QE), high responsivity and low
noise in the spectral range between 1100 nm and 1700 nm. They
are optimized for use at a wavelength of 1550 nm, suitable for use
in eye-safe laser range finding systems.
These APDs are supplied in a hermetically sealed TO-18 package or
on a ceramic carrier. Custom packaging is also available. Please
contact Excelitas to discuss the packaging in further detail. Excelitas
is committed to supplying the highest quality product to our
customers.
Excelitas Technologies is certified to meet ISO-9001 and are
designed to meet MIL-STD-883 and/or MIL-STD-750 specifications.
All devices undergo extended burn-in and periodic process
qualification programs to assure high reliability.
www.excelitas.com
Page 1 of 5
C30645 C30662 Series-Rev.1.2-2013.02



Excelitas
Excelitas

C30662-1 Datasheet Preview

C30662-1 Datasheet

Large Area InGaAs Avalanche Photodiodes

No Preview Available !

C30662-1 pdf
C30645 and C30662 Series
Large area InGaAs Avalanche Photodiodes
Table 1: Electrical Characteristics at TA = 22°C
Parameter
Active Diameter
Breakdown voltage (Vbr)
Operation Point from Breakdown (Vbr-Vop)
Temperature Coefficient of Vbr for Constant Gain
Responsivity (@ 1550 nm)
Dark Current (@ M=10) (id)
Spectral Noise Current (@ M=10) (in)
Capacitance
Bandwidth (@ M=10)
Quantum Efficiency (1300-1550 nm)
Maximum Useable Gain (M)
C30645
Min Typ Max
80
45 50 70
0.14 0.20
9.3
3 50
0.2 1.0
1.25
1000
75
10 20
C30662
Min Typ Max
200
45 50 70
0.14 0.20
9.3
45 150
0.7 1.5
2.5
600 850
75
10 20
C30662-1
Min Typ Max
200
45 50 70
4.0
Units
µm
V
V
V / deg C
A/W
nA
pA/rt(Hz)
pF
MHz
%
No units
Conditions
(@ M=10) (Note 6)
Notes for Table 1
1. A specific voltage, , is supplied with each device. When the photodiode is operated at this voltage (at 22 °C), the device will meet the
electrical characteristic limits shown above. The voltage value will be within the range of 45 to 70 volts.
2. The voltage dependence of the gain, , for gains above 4, is given approximately by the following empirical formula yielding a rough
approximation of the sensitivity:
where:
will vary from APD to APD, but should be within 40-50 for most InGaAs APDs
3. Gain, and quantum efficiency, , are not directly measurable quantities. The numbers quoted are estimated typical values. Gain,
quantum efficiency and responsivity are related by the following:
expressed in A/W
where:
is the quantum efficiency, expressed in %
is the wavelength in units of mm, and
is the APD gain
4. The detector noise current expressed in , is given by the following expression:
√(
)
where:
is the electron charge,
( ) ( ), is the excess noise factor, around 5.5 for InGaAs,
is ionization coefficient, typically around 0.45 for InGaAs, and
and are the un-multiplied and multiplied portions of the dark current, respectively.
The total dark current is given by:
However, since both and are somewhat voltage dependent, and is not directly measurable (see Note 3), it is not usually possible
to determine both and unambiguously. Since system performance depends on noise current and responsivity, these measurable
quantities are the ones that have been specified.
5. Most devices can be operated at gains up to about 30 or more, but with values of noise current correspondingly higher, as indicated by the
discussion in Note 4 above.
6. The product C30662EH can be ordered with a guaranteed minimal delta of the operation voltage bias from the voltage breakdown ( - ),
also known as deltaV or dV. Using the “-1” suffix specifies a dV larger than 4.0 V. Please contact us for more information.
www.excelitas.com
Page 2 of 5
C30645 C30662 Series-Rev.1.2-2013.02


Part Number C30662-1
Description Large Area InGaAs Avalanche Photodiodes
Maker Excelitas
Total Page 5 Pages
PDF Download
C30662-1 pdf
C30662-1 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 C30662-1 Large Area InGaAs Avalanche Photodiodes Excelitas
Excelitas
C30662-1 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy