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C30954EH - Long Wavelength Enhanced Silicon Avalanche Photodiodes

Key Features

  • High quantum efficiency at 1060 nm.
  • Fast response time.
  • Wide operating temperature range.
  • Low capacitance.
  • Hermetically-sealed packages.
  • RoHS-compliant.

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Datasheet Details

Part number C30954EH
Manufacturer Excelitas
File Size 1.03 MB
Description Long Wavelength Enhanced Silicon Avalanche Photodiodes
Datasheet download datasheet C30954EH Datasheet

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Full PDF Text Transcription (Reference)

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DATASHEET Photon Detection C30954EH, C30955EH and C30956EH Series Long Wavelength Enhanced Silicon Avalanche Photodiodes for range finding, LIDAR, and YAG laser detection Excelitas’ C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes is such that their long wave response (i.e. > 900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40% at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics.