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C30956EH - Long Wavelength Enhanced Silicon Avalanche Photodiodes

Download the C30956EH datasheet PDF. This datasheet also covers the C30954EH variant, as both devices belong to the same long wavelength enhanced silicon avalanche photodiodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High quantum efficiency at 1060 nm.
  • Fast response time.
  • Wide operating temperature range.
  • Low capacitance.
  • Hermetically-sealed packages.
  • RoHS-compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C30954EH-Excelitas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C30956EH
Manufacturer Excelitas
File Size 1.03 MB
Description Long Wavelength Enhanced Silicon Avalanche Photodiodes
Datasheet download datasheet C30956EH Datasheet

📁 Similar Datasheet

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C30955E (C30954E - C30956E) Photodiode ETC
C30957E N TYPE SILICON P- I - N PHOTODETECTOR ETC

Other Datasheets by Excelitas

Part Number Description
C30954EH Long Wavelength Enhanced Silicon Avalanche Photodiodes
C30955EH Long Wavelength Enhanced Silicon Avalanche Photodiodes
C30902 High-speed solid state detectors
C30902BH High-speed solid state detectors
C30902EH High-speed solid state detectors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATASHEET Photon Detection C30954EH, C30955EH and C30956EH Series Long Wavelength Enhanced Silicon Avalanche Photodiodes for range finding, LIDAR, and YAG laser detection Excelitas’ C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes is such that their long wave response (i.e. > 900 nm) has been enhanced without introducing any undesirable properties. These APDs have quantum efficiency of up to 40% at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics.