A06N03N Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 3Pulse width limited by maximum junction temperature.
A06N03N is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2%. 3Pulse width limited by maximum junction temperature.