EMB17A03G Description
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
EMB17A03G is Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.