These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package.
Key Features
Closely Matched Current Transfer Ratios.
Minimum BVCEO of 70 V Guaranteed.
MOC205M, MOC206M, MOC207M.
Minimum BVCEO of 30 V Guaranteed.
MOC211M, MOC212M, MOC213M, MOC216M, MOC217M.
Low LED Input Current Required for Easier Logic Interfacing.
MOC216M, MOC217M.
Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing.
Full PDF Text Transcription for MOC211M (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MOC211M. For precise diagrams, and layout, please refer to the original PDF.