FSP8N60 - 600V N-Channel MOSFET

General Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

7.5A,600v,RDS(on)=1.0Ω@VGS=10V.
Gate charge (Typical 30nC).
High ruggedness.
Fast switching.
100% AvalancheTested.
Improved dv/dt capability General.

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FSP8N60 600v n-channel mosfet by FASICARD - Datasheet Preview

Datasheet Details

Part number	FSP8N60
Manufacturer	FASICARD
File Size	699.57 KB
Description	600V N-Channel MOSFET
Datasheet	FSP8N60 Datasheet

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FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.