FSP8N60 Overview
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FSP8N60 Key Features
- 7.5A,600v,RDS(on)=1.0Ω@VGS=10V
- Gate charge (Typical 30nC)
- High ruggedness
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability