• Part: FBM80N70B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: FBM
  • Size: 1.34 MB
Download FBM80N70B Datasheet PDF
FBM
FBM80N70B
FBM80N70B is N-Channel Enhancement Mode MOSFET manufactured by FBM.
- Part of the FBM80N70P comparator family.
Features - 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V - 100% avalanche tested - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) Applications - Switching application - Power Management for Inverter Systems. Pin Description DS G TO-220FB-3L DS G TO-263-2L G N-Channel MOSFET Ordering and Marking Information FBM80N70 YYÿ XXXJWW G FBM80N70 YYÿ XXXJWW G Package Code P : TO-220FB-3L B : TO-263-2L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: FBM lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. FBM lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. FBM defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). FBM reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to ob tain th e l atest version of rel evant inf ormation to verif y b ef ore pl acing ord ers. 1 150623 FBM80N70P/B FBM@ Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 70 ±25 175 -55 to 175 80 IDM Pulsed Drain Current - ID Continuous Drain...