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FEC Semiconductor

ES3BB Datasheet Preview

ES3BB Datasheet

3.0A Surface Mount Super Fast Recovery Rectifier

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F.E.C. Semiconductor
III. Fast / Ultra Fast / Super Fast Recovery Rectifier
3.0A Surface Mount Super Fast Recovery Rectifier
ES3AB~ES3JB
(Package: SMB (DO-214AA))
FEATURES
For surface mounted applications.
Glass passivated junction chip.
Built-in strain relief, ideal for automated placement.
Plastic material used carries Underwriters
Laboratory Flammability Classification 94V-0.
Super Fast recovery for high efficiency.
High temperature soldering : 260 /10 seconds at
terminals.
MECHANICAL DATA
Case : Molded plastic
Terminals : Solder plated
Polarity : Indicated by cathode band
Weight : 0.090 grams
0.086 (2.20)
0.075 (1.90)
0.155 (3.94)
0.130 (3.30)
0.096 (2.44)
0.081 (2.05)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.222 (5.66)
0.185 (4.70)
0.008 (0.203)
MAX.
Case: SMB
Dimensions in inches and (millimetres)
Ratings & Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20%.
Characteristics
Symbol ES3AB ES3BB ES3CB ES3DB ES3EB ES3GB ES3JB Units
Maximum recurrent peak reverse voltage
VRRM 50 100 150 200 300 400
Maximum RMS voltage
VRMS
35
70 105 140 210 280
Maximum DC blocking voltage
VDC 50 100 150 200 300 400
Maximum average forward rectified current
See Fig. 1 @TL=110
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load.
(JEDEC Method)
Maximum instantaneous forward voltage
@ 3.0 A
Maximum DC reverse current @Ta =25
at rated DC blocking voltage @Ta =100
Io
IFSM
VF
IR
3.0
100
0.95 1.30
10
250
Maximum reverse recovery time (Note 1)
Trr
35
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating temperature range
Cj
Rth-JA
Rth-JL
Tj
45
47
12
-55 to +150
30
Storage temperature range
Tstg
Notes:
1. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and applied VR=4.0V.
3. Units mounted on P.C.B. with 0.6”x0.6” (16x16mm) copper pad areas.
-55 to +150
600 Volts
420 Volts
600 Volts
Amps
Amps
1.70 Volts
µA
ns
PF
/W
1




FEC Semiconductor

ES3BB Datasheet Preview

ES3BB Datasheet

3.0A Surface Mount Super Fast Recovery Rectifier

No Preview Available !

F.E.C. Semiconductor
Ratings and Characteristic Curves of ES3AB~ES3JB
FIG. 1- FORWARD CURRENT DERATING CURVE
5.0
4.0
3.0
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE, oC
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
Tj=250C
PULSE WIDTH-300 s
1% DUTY CYCLE
10
1
0.1
0.01
0.4
0.6
0.8 1.0
1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
105
Tj=250C
90 f=1.0MHz
Vsig=50mVp-p
75
60
45 ES3AB-ES3DB
30
15 ES3EB-ES3JB
0
1 10
REVERSE VOLTAGE. (V)
100
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
8.3ms Single Half Sine Wave
(JEDEC Method) at TL=120oC
125
100
75
50
25
0
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
100
Tj=1000C
10
Tj=750C
1
Tj=250C
0.1
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
2


Part Number ES3BB
Description 3.0A Surface Mount Super Fast Recovery Rectifier
Maker FEC Semiconductor
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