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FKBA3004 Datasheet Preview

FKBA3004 Datasheet

N-Ch MOSFETs

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FETek Technology Corp.
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
FKBA3004
N-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS
30V
RDSON
8.5mΩ
ID
58A
PRPAK5X6 Pin Configuration
Description
The FKBA3004 is the high cell density trenched
N-ch MOSFETs, which provide excellent RDSON
and gate charge for most applications.
The FKBA3004 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
Rating
30
±20
58
38
12
9.6
115
57.8
34
46
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
2.7
Unit
/W
/W
1




FETek

FKBA3004 Datasheet Preview

FKBA3004 Datasheet

N-Ch MOSFETs

No Preview Available !

FETek Technology Corp.
FKBA3004
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=15A
VDD=15V , VGS=10V , RG=3.3
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.027
6.5
11
1.5
-5.8
---
---
---
38
1.7
12.6
4.2
5.1
4.6
12.2
26.6
8
1317
163
131
Max.
---
---
8.5
14
2.5
---
1
5
±100
---
2.9
17.6
5.9
7.1
9.2
22
53
16
1844
228
183
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,5
Pulsed Source Current2,5
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min.
VG=VD=0V , Force Current
---
---
VGS=0V , IS=1A , TJ=25
---
IF=30A , dI/dt=100A/µs , TJ=25
---
---
Typ.
---
---
---
9.2
2
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
58
115
1
---
---
Unit
A
A
V
nS
nC
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2


Part Number FKBA3004
Description N-Ch MOSFETs
Maker FETek
Total Page 4 Pages
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