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FKBA3004 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKBA3004
Manufacturer FETek
File Size 543.69 KB
Description N-Channel MOSFET
Download FKBA3004 Download (PDF)

General Description

The FKBA3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.

The FKBA3004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBA3004 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 30V 8.