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FETek

FKBA3018 Datasheet Preview

FKBA3018 Datasheet

N-Ch MOSFETs

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FETek Technology Corp.
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Description
The FKBA3018 is the high cell density trenched
N-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The FKBA3018 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
FKBA3018
N-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS
30V
RDSON
3mΩ
ID
163A
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1,6
Continuous Drain Current, VGS @ 10V1,6
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
Rating
10s Steady State
30
±20
163
103
33.5 21
27 17
325
246.4
70.2
119
52
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
---
Max.
62
25
1.05
Unit
/W
/W
/W
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
1




FETek

FKBA3018 Datasheet Preview

FKBA3018 Datasheet

N-Ch MOSFETs

No Preview Available !

FKBA3018
FETek Technology Corp.
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=10V , ID=15A
VDD=15V , VGS=10V , RG=3.3,
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.022
---
---
---
-6.1
---
---
---
60
0.9
56
18
21
22
43.6
100
33.6
5935
725
538
Max.
---
---
3
4
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
Min. Typ.
IS Continuous Source Current1,5
ISM Pulsed Source Current2,5
VG=VD=0V , Force Current
--- ---
--- ---
VSD Diode Forward Voltage2
VGS=0V , IS=A , TJ=25
--- ---
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF=15A , dI/dt=100A/µs , TJ=25
---
---
25
14
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=70.2A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
6.Package limitation current is 85A.
Max.
163
325
1.2
---
---
Unit
A
A
V
nS
nC
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2


Part Number FKBA3018
Description N-Ch MOSFETs
Maker FETek
Total Page 4 Pages
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