Datasheet Details
| Part number | FKBA3103 |
|---|---|
| Manufacturer | FETek |
| File Size | 456.44 KB |
| Description | P-Channel MOSFET |
| Download | FKBA3103 Download (PDF) |
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| Part number | FKBA3103 |
|---|---|
| Manufacturer | FETek |
| File Size | 456.44 KB |
| Description | P-Channel MOSFET |
| Download | FKBA3103 Download (PDF) |
|
|
|
The FKBA3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKBA3103 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
FKBA3103 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 20mΩ ID -35A PRPAK5X6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Rating 10s Steady State -30 ±20 -35 -22 -13.4 -8.5 -10.7 -6.8 -95 72.2 -38 34.7 5 2 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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|---|---|
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