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FETek

FKBA3103 Datasheet Preview

FKBA3103 Datasheet

P-Ch MOSFETs

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FETek Technology Corp.
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Description
The FKBA3103 is the high cell density trenched
P-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The FKBA3103 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
FKBA3103
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS
-30V
RDSON
20mΩ
ID
-35A
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
Rating
10s Steady State
-30
±20
-35
-22
-13.4
-8.5
-10.7
-6.8
-95
72.2
-38
34.7
52
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
---
Max.
62
25
3.6
Unit
/W
/W
/W
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
1




FETek

FKBA3103 Datasheet Preview

FKBA3103 Datasheet

P-Ch MOSFETs

No Preview Available !

FKBA3103
FETek Technology Corp.
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
VGS=-10V , ID=-15A
VGS=-4.5V , ID=-10A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-5V , ID=-10A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-15A
VDD=-15V , VGS=-10V , RG=3.3,
ID=-15A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
---
---
---
---
---
---
5
13
12.5
5.4
5
4.4
11.2
34
18
1345
194
158
Max.
---
20
32
-2.5
-1
-5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
VSD
trr
Qrr
Parameter
Continuous Source Current1,5
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-15A , dI/dt=100A/µs ,
TJ=25
Min.
---
---
---
---
Typ.
---
---
12.4
5
Max.
-35
-1.2
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
V
nS
nC
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2


Part Number FKBA3103
Description P-Ch MOSFETs
Maker FETek
Total Page 4 Pages
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