Datasheet4U Logo Datasheet4U.com

FKBA3113 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKBA3113
Manufacturer FETek
File Size 443.07 KB
Description P-Channel MOSFET
Download FKBA3113 Download (PDF)

General Description

The FKBA3113 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKBA3113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings PRPAK5X6 Pin Configuration Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating -30 ±20 -31 -24 -7 -62 45 -30 41.7 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBA3113 P-Ch 30V Fast Switching MOSFETs.