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FETek

FKBA4004 Datasheet Preview

FKBA4004 Datasheet

N-Ch MOSFETs

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FETek Technology Corp.
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
FKBA4004
N-Ch 40V Fast Switching MOSFETs
Product Summary
BVDSS
40V
RDSON
11.5mΩ
ID
46A
Description
The FKBA4004 is the high cell density trenched
N-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
The FKBA4004 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Rating
40
±20
46
28
10
8
100
20
20
46
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
Typ.
---
---
Max.
62
2.7
Unit
/W
/W
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
1




FETek

FKBA4004 Datasheet Preview

FKBA4004 Datasheet

N-Ch MOSFETs

No Preview Available !

FKBA4004
FETek Technology Corp.
N-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=20A
VGS=4.5V , ID=10A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=20A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=12A
VDD=12V , VGS=10V , RG=3.3
ID=6A
VDS=15V , VGS=0V , f=1MHz
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.034
9.5
13.5
---
-5.64
---
---
---
36
2.1
10.7
3.3
4.2
8.6
3.4
25
2.2
1314
120
88
Max.
---
---
11.5
16.5
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,5
Pulsed Source Current2,5
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
46
100
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2


Part Number FKBA4004
Description N-Ch MOSFETs
Maker FETek
Total Page 4 Pages
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