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FKBA4400 Datasheet Dual N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKBA4400
Manufacturer FETek
File Size 684.74 KB
Description Dual N-Channel MOSFET
Download FKBA4400 Download (PDF)

General Description

The FKBA4400 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKBA4400 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

PRPAK5X6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKBA4400 Dual N-Ch Fast Switching MOSFETs Product Summary BVDSS RDSON ID 40V 17mΩ 39A 40V 8.