900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






FETek

FKBA8016 Datasheet Preview

FKBA8016 Datasheet

N-Ch MOSFETs

No Preview Available !

FETek Technology Corp.
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
FKBA8016
N-Ch 80V Fast Switching MOSFETs
Product Summary
BVDSS
75V
RDSON
12mΩ
ID
62A
Description
The FKBA8016 is the high cell density trenched
N-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The FKBA8016 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=70
IDM
EAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating
75
±20
62
49
200
80
89
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
W
Typ.
---
---
Max.
62
1.3
Unit
/W
/W
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
1




FETek

FKBA8016 Datasheet Preview

FKBA8016 Datasheet

N-Ch MOSFETs

No Preview Available !

FKBA8016
FETek Technology Corp.
N-Ch 80V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
VGS=10V , ID=10A
VGS=4.5V, ID=8A
VGS=VDS , ID =250uA
VDS=64V , VGS=0V , TJ=25
VDS=64V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=10A
VDS=0V , VGS=0V , f=1MHz
VDS=64V , VGS=10V ,
ID=4A
VDD=40V , VGS=10V ,
RG=3.3, ID=4A
VDS=50V , VGS=0V , f=1MHz
Min.
75
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
9.6
12
---
---
---
---
32
0.66
60.9
8.1
17.9
12.2
24.5
50.5
17.6
3120
140
110
Max.
---
12
14.5
2.5
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
m
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
VSD
trr
Qrr
Parameter
Continuous Source Current1,5
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=4A , dI/dt=100A/µs ,
TJ=25
Min.
---
---
---
---
Typ.
---
---
18.6
65
Max.
62
1.2
---
---
Unit
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=40A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2


Part Number FKBA8016
Description N-Ch MOSFETs
Maker FETek
Total Page 4 Pages
PDF Download

FKBA8016 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FKBA8016 N-Ch MOSFETs
FETek





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy