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FKD0014 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKD0014
Manufacturer FETek
File Size 518.56 KB
Description N-Channel MOSFET
Download FKD0014 Download (PDF)

General Description

The FKD0014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKD0014 meet the RoHS and Green Product requirement with full function reliability approved.

TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Rating 100 ±20 9 5.7 2.3 1.8 18 31 2 -55 to 150 -55 to 150 Units V V A A A A A W W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Typ.

Overview

FETek Technology Corp.

 Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKD0014 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS.