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FKD28N15 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKD28N15
Manufacturer FETek
File Size 664.11 KB
Description N-Channel MOSFET
Download FKD28N15 Download (PDF)

General Description

TO252 Pin Configuration The FKD28N15 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKD28N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 150 ±20 30 22 60 216 38 115 -55 to 175 -55 to 175 Typ.

Overview

FETek Technology Corp.

 Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKD28N15 N-Ch 150V Fast Switching MOSFETs Product Summary BVDSS.