Datasheet Details
| Part number | FKD3004 |
|---|---|
| Manufacturer | FETek |
| File Size | 450.69 KB |
| Description | N-Channel MOSFET |
| Download | FKD3004 Download (PDF) |
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| Part number | FKD3004 |
|---|---|
| Manufacturer | FETek |
| File Size | 450.69 KB |
| Description | N-Channel MOSFET |
| Download | FKD3004 Download (PDF) |
|
|
|
The FKD3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKD3004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKD3004 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 30V 8.5mΩ 55A TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Rating 30 ±20 55 40 13.6 11.4 110 57.8 34 41 2.42 -55 to 175 -55 to 175 Units V V A A A A A mJ A W W ℃ ℃ Typ.
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density.
| Part Number | Description |
|---|---|
| FKD3002 | N-Channel MOSFET |
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