Datasheet Details
| Part number | FKD3018 |
|---|---|
| Manufacturer | FETek |
| File Size | 421.49 KB |
| Description | N-Channel MOSFET |
| Download | FKD3018 Download (PDF) |
|
|
| Part number | FKD3018 |
|---|---|
| Manufacturer | FETek |
| File Size | 421.49 KB |
| Description | N-Channel MOSFET |
| Download | FKD3018 Download (PDF) |
|
|
|
The FKD3018 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.
The FKD3018 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,6 Continuous Drain Current, VGS @ 10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 30 ±20 155 110 310 246 70.2 89.3 -55 to 175 -55 to 175 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology FKD3018 N-Ch 30V Fast Switching.
| Part Number | Description |
|---|---|
| FKD3014 | N-Channel MOSFET |
| FKD3016 | N-Channel MOSFET |
| FKD3002 | N-Channel MOSFET |
| FKD3004 | N-Channel MOSFET |
| FKD3006 | N-Channel MOSFET |
| FKD3008 | N-Channel MOSFET |
| FKD3031 | P-Ch 30V Fast Switching MOSFET |
| FKD3101 | P-Channel MOSFET |
| FKD3103 | P-Channel MOSFET |
| FKD3105 | P-Channel MOSFET |