Datasheet Details
| Part number | FKD3113 |
|---|---|
| Manufacturer | FETek |
| File Size | 439.11 KB |
| Description | P-Channel MOSFET |
| Download | FKD3113 Download (PDF) |
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| Part number | FKD3113 |
|---|---|
| Manufacturer | FETek |
| File Size | 439.11 KB |
| Description | P-Channel MOSFET |
| Download | FKD3113 Download (PDF) |
|
|
|
The FKD3113 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKD3113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKD3113 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 30mΩ TO252 Pin Configuration ID -27A Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -30 ±20 -27 -17 -6.8 -5.5 -54 45 -30 31.3 2 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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|---|---|
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