Datasheet Details
| Part number | FKF4115 |
|---|---|
| Manufacturer | FETek |
| File Size | 573.15 KB |
| Description | P-Channel MOSFET |
| Download | FKF4115 Download (PDF) |
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| Part number | FKF4115 |
|---|---|
| Manufacturer | FETek |
| File Size | 573.15 KB |
| Description | P-Channel MOSFET |
| Download | FKF4115 Download (PDF) |
|
|
|
FKF4115 P-Ch 40V Fast Switching MOSFETs Product Summary BVDSS -40V RDSON 13mΩ ID -41A TO220F Pin Configuration The FKF4115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKF4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -40 ±20 -41 -26 -10 -8 -165 145.8 -54 34.7 2 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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