Datasheet Details
| Part number | FKH3018B |
|---|---|
| Manufacturer | FETek |
| File Size | 564.12 KB |
| Description | N-Channel MOSFET |
| Download | FKH3018B Download (PDF) |
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| Part number | FKH3018B |
|---|---|
| Manufacturer | FETek |
| File Size | 564.12 KB |
| Description | N-Channel MOSFET |
| Download | FKH3018B Download (PDF) |
|
|
|
The FKH3018B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKH3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKH3018B N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 2mΩ ID 205A TO263 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,6 Continuous Drain Current, VGS @ 10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 30 ±20 205 145 500 246 70.2 187 -55 to 175 -55 to 175 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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