Datasheet Details
| Part number | FKR0008 |
|---|---|
| Manufacturer | FETek |
| File Size | 592.01 KB |
| Description | N-Channel MOSFET |
| Download | FKR0008 Download (PDF) |
|
|
| Part number | FKR0008 |
|---|---|
| Manufacturer | FETek |
| File Size | 592.01 KB |
| Description | N-Channel MOSFET |
| Download | FKR0008 Download (PDF) |
|
|
|
The FKR0008 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKR0008 meet the RoHS and Green Product requirement with full function reliability approved.
TO251 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology FKR0008 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 310mΩ ID 5.
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|---|---|
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