Datasheet Details
| Part number | FKR0014 |
|---|---|
| Manufacturer | FETek |
| File Size | 514.84 KB |
| Description | N-Channel MOSFET |
| Download | FKR0014 Download (PDF) |
|
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| Part number | FKR0014 |
|---|---|
| Manufacturer | FETek |
| File Size | 514.84 KB |
| Description | N-Channel MOSFET |
| Download | FKR0014 Download (PDF) |
|
|
|
The FKR0014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKR0014 meet the RoHS and Green Product requirement with full function reliability approved.
TO251 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 100 ±20 9 5.7 2.3 1.8 18 31 2 -55 to 150 -55 to 150 Units V V A A A A A W W ℃ ℃ Typ.
FETek Technology Corp.
Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available FKR0014 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS.
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