Datasheet Details
| Part number | FKR0026 |
|---|---|
| Manufacturer | FETek |
| File Size | 673.25 KB |
| Description | N-Channel MOSFET |
| Download | FKR0026 Download (PDF) |
|
|
| Part number | FKR0026 |
|---|---|
| Manufacturer | FETek |
| File Size | 673.25 KB |
| Description | N-Channel MOSFET |
| Download | FKR0026 Download (PDF) |
|
|
|
The FKR0026 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKR0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO251 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 100 ±20 49 39 120 16 18 90 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology FKR0026 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS.
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