Datasheet Details
| Part number | FKR3004 |
|---|---|
| Manufacturer | FETek |
| File Size | 420.30 KB |
| Description | N-Channel MOSFET |
| Download | FKR3004 Download (PDF) |
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| Part number | FKR3004 |
|---|---|
| Manufacturer | FETek |
| File Size | 420.30 KB |
| Description | N-Channel MOSFET |
| Download | FKR3004 Download (PDF) |
|
|
|
The FKR3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKR3004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKR3004 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 30V 8.5mΩ 55A TO251 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case Rating 30 ±20 55 40 13 10.8 110 58 34 41.6 2.42 -55 to 175 -55 to 175 Units V V A A A A A mJ A W W ℃ ℃ Typ.
FETek Technology Corp.
Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Advanced high cell density.
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