Datasheet Details
| Part number | FKR3105 |
|---|---|
| Manufacturer | FETek |
| File Size | 562.69 KB |
| Description | P-Channel MOSFET |
| Download | FKR3105 Download (PDF) |
|
|
| Part number | FKR3105 |
|---|---|
| Manufacturer | FETek |
| File Size | 562.69 KB |
| Description | P-Channel MOSFET |
| Download | FKR3105 Download (PDF) |
|
|
|
The FKR3105 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKR3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
FKR3105 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 15mΩ ID -45A TO251 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 10s Steady State -30 ±25 -45 -30 -15 -9.6 -12 -7.7 -150 125 -50 45 5 2.0 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
| Part Number | Description |
|---|---|
| FKR3101 | P-Channel MOSFET |
| FKR3115 | P-Channel MOSFET |
| FKR3002 | N-Channel MOSFET |
| FKR3004 | N-Channel MOSFET |
| FKR3006 | N-Channel MOSFET |
| FKR3008 | N-Channel MOSFET |
| FKR3016 | N-Channel MOSFET |
| FKR0004 | N-Channel MOSFET |
| FKR0008 | N-Channel MOSFET |
| FKR0014 | N-Channel MOSFET |