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FKS0004 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKS0004
Manufacturer FETek
File Size 517.32 KB
Description N-Channel MOSFET
Download FKS0004 Download (PDF)

General Description

The FKS0004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKS0004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 100 ±20 2.5 2 10 6.1 11 1.5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKS0004 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 112mΩ ID 2.