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FKS0204 Datasheet Dual N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKS0204
Manufacturer FETek
File Size 522.55 KB
Description Dual N-Channel MOSFET
Download FKS0204 Download (PDF)

General Description

The FKS0204 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKS0204 meets the RoHS and Green Product requirement with full function reliability approved.

SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Data and specifications subject to change without notice.

Overview

FETek Technology Corp.

 Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKS0204 Dual N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 112mΩ ID 2.