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FKS3018B Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKS3018B
Manufacturer FETek
File Size 596.61 KB
Description N-Channel MOSFET
Download FKS3018B Download (PDF)

General Description

The FKS3018B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKS3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

FKS3018B N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 30V 3mΩ 24A SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Rating 30 ±20 24 15 175 80 40 3.1 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density.