Datasheet Details
| Part number | FKS4901 |
|---|---|
| Manufacturer | FETek |
| File Size | 672.44 KB |
| Description | Dual-Channel MOSFET |
| Download | FKS4901 Download (PDF) |
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| Part number | FKS4901 |
|---|---|
| Manufacturer | FETek |
| File Size | 672.44 KB |
| Description | Dual-Channel MOSFET |
| Download | FKS4901 Download (PDF) |
|
|
|
The FKS4901 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKS4901 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
FKS4901 N-Ch and P-Ch Fast Switching MOSFETs Product Summary BVDSS 40V -40V RDSON 26mΩ 32mΩ ID 6.1A -6A SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating N-Ch P-Ch 40 ±20 -40 ±20 6.1 -6 4.9 -4.8 23 -22 16.2 39 18 -28 1.67 1.67 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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|---|---|
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