Datasheet Details
| Part number | FKS6008 |
|---|---|
| Manufacturer | FETek |
| File Size | 590.53 KB |
| Description | N-Channel MOSFET |
| Download | FKS6008 Download (PDF) |
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| Part number | FKS6008 |
|---|---|
| Manufacturer | FETek |
| File Size | 590.53 KB |
| Description | N-Channel MOSFET |
| Download | FKS6008 Download (PDF) |
|
|
|
FKS6008 N-Ch 60V Fast Switching MOSFETs Product Summary BVDSS RDSON ID 60V 90mΩ 3A SOP8 Pin Configuration The FKS6008 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKS6008 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 3 2.4 12 6.2 11.2 1.5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density.
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