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FKS6032 Datasheet N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKS6032
Manufacturer FETek
File Size 689.89 KB
Description N-Channel MOSFET
Download FKS6032 Download (PDF)

General Description

SOP8 Pin Configuration The FKS6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKS6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Rating 60 ±20 13 8 60 80 40 2.7 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

FKS6032 N-Ch 60V Fast Switching MOSFETs  Super Low Gate Charge  100% EAS Guaranteed  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 60V 8.