Datasheet Details
| Part number | FKS6032 |
|---|---|
| Manufacturer | FETek |
| File Size | 689.89 KB |
| Description | N-Channel MOSFET |
| Download | FKS6032 Download (PDF) |
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| Part number | FKS6032 |
|---|---|
| Manufacturer | FETek |
| File Size | 689.89 KB |
| Description | N-Channel MOSFET |
| Download | FKS6032 Download (PDF) |
|
|
|
SOP8 Pin Configuration The FKS6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKS6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Rating 60 ±20 13 8 60 80 40 2.7 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
FETek Technology Corp.
FKS6032 N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 60V 8.
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|---|---|
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