Datasheet4U Logo Datasheet4U.com

FKS6115 Datasheet P-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKS6115
Manufacturer FETek
File Size 446.00 KB
Description P-Channel MOSFET
Download FKS6115 Download (PDF)

General Description

The FKS6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKS6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -60 ±20 -11 -8.5 -22 113 47.6 5.2 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKS6115 P-Ch 60V Fast Switching.