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FKS6208 Datasheet Dual N-Channel MOSFET

Manufacturer: FETek

Datasheet Details

Part number FKS6208
Manufacturer FETek
File Size 513.07 KB
Description Dual N-Channel MOSFET
Download FKS6208 Download (PDF)

General Description

The FKS6208 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKS6208 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Dual SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating 60 ±20 3 2.4 12 6.3 11.2 1.5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.

Overview

FETek Technology Corp.

 100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKS6208 Dual N-Ch 60V Fast Switching MOSFETs.