A1024 Datasheet | FGX

- ç¹âÐÀ¼¼Êõ×ÊÁÏ - - APPLICATION: High Voltage Applications. - PNP silicon - - - MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -150 -150 -5 -50 1 150 V V V m A W ℃ TO-92L 1. Emitter 2. Collector 3. Base ﹣55~150 ℃ - - ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL h FE ICBO IEBO BVCBO -150 -150 -5 -0.9 -0.8 120 4.0 5.0 70 MIN. TYP. MAX. UNIT 240 -0.1 -0.1 µA µA V V V V V MHz PF TEST CONDITION VCE= -5V，Ic= -10m A VCB= -150V，IE=0 VEB= -5V，Ic=0 Ic= -0.1m A，IE=0 Ic= -1m A，IB=0 IE= -0.1m A，Ic=0 VCE= -5V，Ic= -30m A Ic= -10m A，IB= -1m A Ic= -10m A，VCE= -30V VCB= -10V, IE=0, f = 1MHz Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage BVEBO VBE Collector-Emitter Saturation Voltage VCE(sat) Gain bandwidth product mon Base Output Capacitance f T Cob - - h FE Classification Classification h FE O 70~140 Y 120~240 Free Datasheet...