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C1675 Datasheet Preview

C1675 Datasheet

NPN SIlicon

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■■APPLICATIONFM/AM RF AMP, MIX, CONV,OSC,IF.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING UNIT
VCBO
50
V
VCEO
30
V
VEBO
5
V
IC 50 mA
PC 250 mW
TJ 150
Tstg 55~150
C1675
—NPN silicon —
■■ELECTRICAL CHARACTERISTICSTa=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 40
240 VCE= 6 VIc= 1 mA
Collector Cut-off Current
ICBO
0.1 µA
VCB= 50VIE=0
Emitter Cut-off Current
IEBO
0.1 µA
VEB= 5 VIc=0
Collector-Base Breakdown Voltage BVCBO 50
V Ic= 10µAIE=0
Collector-Emitter Breakdown Voltage BVCEO 30
V Ic= 5 mAIB=0
Emitter-Base Breakdown Voltage
BVEBO
5
V IE= 10µAIc=0
Collector-Emitter Saturation Voltage VCE(sat)
0.08 0.3 V
Ic= 10 mAIB= 1 mA
Base-Emitter Voltage
VBE
0.67 0.75 V
VCE= 6 VIc= 1 mA
Gain bandwidth product
fT 150 300
MHz Ic= 1 mAVCE= 6 V
Common Base Output Capacitance Cob
2.0 2.5 PF
VCB= 6 V, IE=0, f = 1 MHz
■■hFE Classification
Classification      R       O        Y
hFE
4080
70140
120240


Part Number C1675
Description NPN SIlicon
Maker FGX
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C1675 Datasheet PDF





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