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C2271
■■APPLICATION: High Voltage Amplifier Applications. —NPN silicon —
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ Tstg RATING UNIT 300 300 6V 100 900 150 mA mW ℃ V V
1
TO-92L
1. Emitter 2. Collector 3. Base
﹣55~150 ℃
■■ELECTRICAL CHARACTERISTICS （Ta=25℃）
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance SYMBOL hFE ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) fT Cob 50 7.5 300 300 6 0.6 40 MIN.
C2271 Datasheet
