Datasheet Details
| Part number | 06N02C |
|---|---|
| Manufacturer | FNK |
| File Size | 248.67 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 06N02C Datasheet
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| Part number | 06N02C |
|---|---|
| Manufacturer | FNK |
| File Size | 248.67 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
06N02C Datasheet
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The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Power and current handing capability ● Lead free product is acquired Schematic diagram Application ●Battery Switch ●Load switch ●Power management Package Marking And Ordering Information Device Marking Device Device Package 06N02C FNK06N02C TO-251 Reel Size Tape width Quantity Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25 Continuous Drain Current (TJ =150℃) TC =70℃ TA =25℃ ID TA =70℃ Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±12 50 20 20 15 80 50 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) www.FNK-TECH.com Page 1 v1.0 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Notes: 1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
FNK06N02C N-Channel Enhancement Mode Power MOSFET.
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