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30H80/30H80A
N-Channel Enhancement Mode MOSFET
Features
• 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A,
RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V
• Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
30H80 Datasheet
