* VDS = 100V,ID =100A RDS(ON) < 213mΩ @ VGS=10V (Typ:200m Ω) TO-251S top view Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuou
FNK01N01D
FNK
1.27 MB
N-channel power mosfet.
100V N-Channel MOSFET The FNK10N01D have been fabricated using the advanced MOSTMhigh voltage process that is designed to deliver high levels of perfo.
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