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FNK01N01D Datasheet N-channel Power MOSFET

Manufacturer: FNK

Overview: 100V N-Channel MOSFET The FNK10N01D have been fabricated using the advanced MOSTMhigh voltage process that is designed to deliver high levels of performance and robustness in switching application By providing low R ,DS(on) Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power designs.

Datasheet Details

Part number FNK01N01D
Manufacturer FNK
File Size 1.27 MB
Description N-Channel Power MOSFET
Datasheet FNK01N01D-FNK.pdf

Key Features

  • VDS = 100V,ID =100A RDS(ON) < 213mΩ @ VGS=10V (Typ:200m Ω) TO-251S top view Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current TA=25°C TA=70°C IDSM Maximum 100 ±20 100 65 340 16 12 Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Tempe.

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FNK01N01D Distributor