FNK03N03 mosfet equivalent, n-channel power mosfet.
* VDS =30V,ID =100A RDS(ON) <3.2mΩ @ VGS=10V
(Typ:2.5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .
General Features
* VDS =30V,ID =100A RDS(ON) <3.2mΩ @ VGS=10V
(Typ:2.5mΩ)
* High density cell design for ult.
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